Self-Aligned Double Injection-Function TFT for Deep Sub-Micrometer Channels’ Length—Application to Solution-Processed Indium Gallium Zinc Oxide

We propose and demonstrate self-aligned Double Injection Function Thin Film Transistor (DIF-TFT) architecture that mitigates short channel effects in 200 nm on non-scaled insulator (100 SiO 2 ). In this conceptual design, a combination of ohmic-like injection contact high injection-barrier metal allows maintaining the ON currents while suppressing drain-induced barrier lowering (DIBL) effects. Using an industrial 2-D device simulator (Sentaurus), we two methods to realize DIF concept. use one them demonstrate, experimentally, DIF-TFT based solution-processed indium gallium zinc oxide (IGZO). molybdenum as ohmic platinum barrier, compare three transistors’ source-contacts: ohmic, Schottky, DIF. The fabricated exhibits saturation at sub 1 V drain bias with only about factor 2 loss current compared contact.